A multipoint correlation method for bulk trap and interface state measurements in MOS structures from capacitance, voltage, and current transients
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1142399
Reference73 articles.
1. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
2. Expedient method of obtaining interface state properties from MIS conductance measurements
3. Interface states in SiSiO2 interfaces
4. Interface states on semiconductor/insulator surfaces
5. Measurement of interface‐state parameters near the band edge at the Si/SiO2interface by the conductance method
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1. Detection of traps induced and activated by high field stress in an N-channel VDMOSFET transistor using current deep level transient spectroscopy (CDLTS);Microelectronic Engineering;2011-11
2. Development of Computer Controlled Deep Level Transient Spectroscopy System;IETE Technical Review;1998-01
3. New correlation procedure for the improvement of resolution of deep level transient spectroscopy of semiconductors;Journal of Applied Physics;1997-09-15
4. Identification of tunneling emission in Si‐SiO2interfaces by multipoint correlation method with binomial weighting coefficients;Journal of Applied Physics;1994-07
5. Thermally stimulated current measurements of SiO2 defect density and energy in irradiated metal‐oxide‐semiconductor capacitors;Review of Scientific Instruments;1992-12
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