Tin impurity atoms in vacuum deposited amorphous silicon-Reference-Cited by-同舟云学术

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Tin impurity atoms in vacuum deposited amorphous silicon

Published:1984-05-16 Issue:1 Volume:83 Page:285-289
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Nasredinov F. S.,Andreev A. A.,Kurmantaev A. N.,Regel A. R.,Seregin P. P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. A Study of Local Structure of Chalcogenide Vitreous Semiconductors and of States of Impurity Atoms in Them by Means of Mössbauer and Electron Spectroscopies

2. , Proc. 10th Internat. Conf. Phys. Semicond. Cambridge, US Atomic Energy Commission, 1970 (p. 658).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of semiconductor processing by 119Sn conversion electron Mössbauer spectroscopy;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1989-08

2. Characterization of Semiconductors by Mössbauer Spectroscopy;Mössbauer Spectroscopy Applied to Inorganic Chemistry;1989

3. Doped semiconductors and other solar energy materials;Hyperfine Interactions;1988-02

4. A channelling and conversion electron Mossbauer spectroscopy study of annealing behaviour of tin implanted silicon;Semiconductor Science and Technology;1986-10-01

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