Characterization of semiconductor processing by 119Sn conversion electron Mössbauer spectroscopy-Reference-Cited by-同舟云学术

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Characterization of semiconductor processing by 119Sn conversion electron Mössbauer spectroscopy

Published:1989-08 Issue:2-3 Volume:280 Page:552-556
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Stedile F.C.,Schreiner W.H.,Dionísio P.H.,Baumvol I.J.R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. A channelling and conversion electron Mossbauer spectroscopy study of annealing behaviour of tin implanted silicon

2. Structure and composition of amorphous Ge1−xSnxthin films

3. F.C. Stedile, B.A.S. de Barros, Jr., C.V. Barros Leite, F.L. Freire, I.J.R. Baumvol and W.H. Schreiner, to be published in Thin Solid Films.

4. Mössbauer Spectroscopy and its Chemical Applications;Tricker,1981

5. Mössbauer Spectroscopy and its Chemical Applications;Longworth,1981

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applications of conversion electron Mössbauer spectrometry (CEMS);Journal of Radioanalytical and Nuclear Chemistry Articles;1996-01

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