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Neutron and X-ray diffraction investigations of silicon implanted by phosphorus ions

  • Published:1975-07-16 Issue:1 Volume:30 Page:155-162
  • ISSN:0031-8965
  • Container-title:Physica Status Solidi (a)
  • language:en
  • Short-container-title:Phys. Stat. Sol. (a)

Author:

Eichhorn F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. The annealing characteristics of phosphorous implanted silicon. I

2. The annealing characteristics of phosphorus-implanted silicon Part II

3. Zentralinst. f. Kernf., Rossendorf, ZfK-RN 32 (1965).

4. Dissertation, TU Dresden, 1966.

5. Röntgenstrahlinterferenzen, Akademische Verlagsgesellschaft, Frankfurt/M. 1960.

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1. Dynamical neutron diffraction on perfect crystals;Physics of Atomic Nuclei;2002-11

2. Analysis of ion-implanted silicon using high-resolution X-ray diffraction;Applied Physics A Solids and Surfaces;1994-03

3. Distribution of strain in Ge ion implanted silicon measured by high resolution X-ray diffraction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06

4. Simulation of X-ray diffraction curves from ion-implanted wafers and relaxed II-VI superlattices;Journal of Physics D: Applied Physics;1993-04-14

5. X-ray determination of lattice damage depth-profiles due to electronic and nuclear energy losses in silicon implanted with MeV boron ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-05
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