X-ray determination of lattice damage depth-profiles due to electronic and nuclear energy losses in silicon implanted with MeV boron ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Neutron and X-ray diffraction investigations of silicon implanted by phosphorus ions
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5. Dynamical x‐ray diffraction from nonuniform crystalline films: Application to x‐ray rocking curve analysis
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoelectrons in X-ray standing-wave technique: potentialities in crystal subsurface layer investigation;Il Nuovo Cimento D;1997-02
2. Defect production in silicon irradiated with 5.68 GeV Xe ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-02
3. Characterization of Lattice Defects in Ion-Implanted Silicon;X-Ray and Neutron Dynamical Diffraction;1996
4. On the role of the static Debye-Waller factor in X-ray rocking curve analysis;Physica Status Solidi (a);1995-03-16
5. Crystal-trim and its application to investigations on channeling effects during ion implantation;Radiation Effects and Defects in Solids;1994-07
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