Characterization of lattice damage in ion implanted silicon by multiple crystal x-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. X‐ray study of lattice strain in boron implanted laser annealed silicon
2. Strain profiles in ion-doped silicon obtained from X-ray rocking curves
3. Double-crystal X-ray diffraction analysis of low-temperature ion implanted silicon
4. On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry
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2. 3D Local Manipulation of the Metal–Insulator Transition Behavior in VO 2 Thin Film by Defect‐Induced Lattice Engineering;Advanced Materials Interfaces;2018-02-05
3. Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism;Physical Review Materials;2018-01-16
4. Dynamical X-ray diffraction theory: Characterization of defects and strains in as-grown and ion-implanted garnet structures;physica status solidi (b);2017-03-20
5. Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F;Journal of Applied Physics;2016-07-07
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