Tunnelling theories of non-volatile semiconductor memories
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of interface traps in silicon-quantum-dots-based memory structures;Physica E: Low-dimensional Systems and Nanostructures;2000-08
2. Chapter 5 Multilayer dielectrics for memory applications;New Insulators, Devices and Radiation Effects;1999
3. Discharging process by multiple tunnelings in thin-oxide MNOS structures;IEEE Transactions on Electron Devices;1982-08
4. Discharging process by multiple tunnelings in MNOS structures;IEEE Electron Device Letters;1981-02
5. Valence alternation pair model of charge storage in MNOS memory devices;Journal of Applied Physics;1979-06
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