A simple equivalent circuit for the MNOST memory element-Reference-Cited by-同舟云学术

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A simple equivalent circuit for the MNOST memory element

Published:1972-06 Issue:6 Volume:15 Page:707-719
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Brown M.A.C.S.,Bounden J.E.,Vanstone G.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. MEMORY BEHAVIOR OF AN MNS CAPACITOR

2. A new MNOS charge storage effect

3. Flat-band voltage hysteresis of MNOS structures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Functional modelling of non-volatile MOS memory devices;Solid-State Electronics;1976-10

2. Tunnelling theories of non-volatile semiconductor memories;Physica Status Solidi (a);1976-05-16

3. Memory traps in MNOS diodes measured by thermally stimulated current;Solid-State Electronics;1976-01

4. Fet Technologies and Applications;Semiconducting Devices;1976

5. Bias-Temperature-Stress Studies of Charge Retention in Dual-Dielectric, Charge-Storage Cells;Bell System Technical Journal;1974-11

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