An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers. II. EBIC images of dislocations
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers: I. Minority carrier generation, diffusion, and collection
2. Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductors
3. The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type silicon
4. Observation of dislocations and microplasma sites in semiconductors by direct correlations of STEBIC, STEM and ELS
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