Characterization of trap sites in thin oxide on selenium-passivated GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
2. Electronic properties of Se‐treated SiO2/GaAs interfaces
3. Formation of a Me/GaAs Heterocontact with an Intermediate Layer of Gallium Selenide
4. Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes
5. Effects of passivating ionic films on the photoluminescence properties of GaAs
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