Characterization of Semiconductor Epitaxial Layer Interfaces by Persistent Photoconductivity-Reference-Cited by-同舟云学术

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Characterization of Semiconductor Epitaxial Layer Interfaces by Persistent Photoconductivity

Published:1991-08-16 Issue:2 Volume:126 Page:397-410
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Anagnostakis E. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Physics of Semiconductor Devices, Chapt. 3, Wiley-Intersci., 1969.

2. Mobility profiling of f.e.t. structures

3. Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers

4. Hall-Effect Analysis of Persistent Photocurrents inn-GaAs Layers

5. Profiling of deep impurities by persistent photocurrent measurements

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3. Study on the rapid thermal annealing process of low-energy arsenic and phosphorous ion-implanted silicon by reflective second harmonic generation;Journal of Physics D: Applied Physics;2005-10-24

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