Study on the rapid thermal annealing process of low-energy arsenic and phosphorous ion-implanted silicon by reflective second harmonic generation
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/38/i=21/a=014/pdf
Reference26 articles.
1. Second-Harmonic Reflection from Silicon Surfaces and Its Relation to Structural Symmetry
2. Femtosecond-Time-Resolved Surface Structural Dynamics of Optically Excited Silicon
3. Symmetry analysis of second-harmonic generation in silicon
4. Ultra-low energy ion implantation of boron for future silicon devices
5. Characterization of Semiconductor Epitaxial Layer Interfaces by Persistent Photoconductivity
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2. Second harmonic generation and simplified bond hyperpolarizability model analyses on the intermixing of Si/SiGe stacked multilayers for gate-all-around structure;Nanotechnology;2023-01-25
3. Structure of an In Situ Phosphorus-Doped Silicon Ultrathin Film Analyzed Using Second Harmonic Generation and Simplified Bond-Hyperpolarizability Model;Nanomaterials;2022-12-04
4. Nano-Scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation;IEEE Transactions on Semiconductor Manufacturing;2021-08
5. The evolution of structure and defects in the implanted Si surface: Inspecting by reflective second harmonic generation;Applied Surface Science;2016-12
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