Minority electron mobility in a p-n GaN photodetector-Reference-Cited by-同舟云学术

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Minority electron mobility in a p-n GaN photodetector

Published:2000-01-01 Issue:1 Volume:15 Page:51-54
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Guan Z P,Li J Z,Zhang G Y,Jin S X,Ding X M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers

4. Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

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2. Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers;Applied Physics Letters;2019-08-12

3. Van der Waals Broken-Gap p–n Heterojunction Tunnel Diode Based on Black Phosphorus and Rhenium Disulfide;ACS Applied Materials & Interfaces;2019-01-30

4. Monte Carlo simulation of III-nitride photocathodes;Journal of Applied Physics;2018-03-28

5. Drop-cast and dye-sensitized ZnO nanorod-based visible-light photodetectors;physica status solidi (RRL) - Rapid Research Letters;2013-07-01

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