Van der Waals Broken-Gap p–n Heterojunction Tunnel Diode Based on Black Phosphorus and Rhenium Disulfide-Reference-Cited by-同舟云学术

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Van der Waals Broken-Gap p–n Heterojunction Tunnel Diode Based on Black Phosphorus and Rhenium Disulfide

Published:2019-01-30 Issue:8 Volume:11 Page:8266-8275
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Srivastava Pawan Kumar,Hassan Yasir,Gebredingle Yisehak,Jung Jaehyuck,Kang Byunggil,Yoo Won Jong^ORCID,Singh Budhi¹^ORCID,Lee Changgu^ORCID

Affiliation:

1. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India

Funder

National Research Foundation of Korea

Department of Science and Technology, Ministry of Science and Technology

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b22103

Reference46 articles.

1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

2. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

3. Atomically thin quantum light-emitting diodes

4. A subthermionic tunnel field-effect transistor with an atomically thin channel

5. Field-Effect Transistors Built from All Two-Dimensional Material Components

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