Author:
Pizzini S.,Binetti S.,Acciarri M.,Acerboni S.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Influence of Extended Defects and Native Impurities on the Electrical Properties of Directionally Solidified Polycrystalline Silicon
2. Infrared Studies of Crystal Defects, Taylor & Francis, Ltd., London 1973 (p. 97).
3. , , , and , in: Point and Extended Defects in Semiconductors, Ed. , and , Plenum Press, 1989 (p. 105).
4. Mechanism of Carbon and Oxygen Incorporation in Silicon Single Crystals Grown by the Czochralski (Cz) Technique
5. , , , , and , in: Polycrystalline Semiconductors, Ed. , and , Springer-Verlag, 1989 (p. 115).
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献