Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon-Reference-Cited by-同舟云学术

Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon

Published:1989 Issue: Volume: Page:105-121
ISSN:0258-1221
Container-title:Point and Extended Defects in Semiconductors
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Author:

Pizzini S.,Borsani F.,Sandrinelli A.,Narducci D.,Allegretti F.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4684-5709-4_8

Reference35 articles.

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2. R. W. Cahn, “Physical Metallurgy”, North Holland, Amsterdam (1970).

3. M. O. Cower, T. O. Sedwick, Chemical vapour deposited polycrystalline silicon, J. Electrochem. Soc. 119:1565 (1972)

4. A. L. Fripp, L. H. Slack, Resistivity doped polycrystalline silicon J. Electrochem. Soc. 120:146 (1973)

5. M. M. Mandurah, K. C. Saraswat, C. R. Helms, Dopant segregation in polycrystalline silicon, J. Appl. Phys. 51:5755 (1980)

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