The influence of dislocations on the diffusion of gold in silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Solubility and Diffusivity of Gold, Iron, and Copper in Silicon
2. Mechanism of Gold Diffusion into Silicon
3. The diffusion of gold in thin silicon slices
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Intrinsic Point Defects;Computational Microelectronics;2004
2. An investigation of the rate of Si self-interstitial annihilation at dislocations;Journal of Physics: Condensed Matter;1996-07-29
3. Temperature dependence of dislocation efficiency as sinks for self‐interstitials in silicon as measured by gold diffusion;Journal of Applied Physics;1995-08
4. Dislocation–gold interaction in silicon the role of dislocations as sinks for self-interstitials;Physica Status Solidi (a);1993-08-16
5. Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon;MRS Proceedings;1992
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