An investigation of the rate of Si self-interstitial annihilation at dislocations
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An application of gold diffusion for defect investigation in silicon;Physica B: Condensed Matter;2009-12
2. Influence of extended defects on gold diffusion in plastically deformed silicon;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2009-08
3. Effect of dislocation trails on gold diffusion in Si;physica status solidi (c);2009-08
4. Gold Diffusion as a Tool for Defect Characterization in Si;Solid State Phenomena;2003-09
5. Interaction of gold with dislocations in silicon;Materials Science and Engineering: B;2000-02
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