Dislocation–gold interaction in silicon the role of dislocations as sinks for self-interstitials-Reference-Cited by-同舟云学术

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Dislocation–gold interaction in silicon the role of dislocations as sinks for self-interstitials

Published:1993-08-16 Issue:2 Volume:138 Page:465-471
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Pichaud B.,Mariani G.,Taylor W. J.,Yang W.-S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Mechanism of Gold Diffusion into Silicon

2. Mechanism and kinetics of the diffusion of gold in silicon

3. Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements

4. U- and W-shaped diffusion profiles of gold in silicon

5. The Influence of Dislocations on the Diffusion Behavior of Gold in Silicon

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interaction of gold with dislocations in silicon;Materials Science and Engineering: B;2000-02

2. Interstitial Silicon Sink Efficiency of Dislocations Studied by Gold Diffusion in FZ and Cz Samples;MRS Proceedings;1997

3. An investigation of the rate of Si self-interstitial annihilation at dislocations;Journal of Physics: Condensed Matter;1996-07-29

4. Effects of copper and oxygen precipitation during thermal oxidation of silicon: An electron‐beam‐induced current study;Journal of Applied Physics;1995-12

5. Phosphorus diffusion effect on defect structure of silicon with oxygen precipitates revealed by gold diffusion study;Applied Physics Letters;1995-10-02

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