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On the Dynamic Annealing Mechanism in P+-Implanted Silicon

  • Published:1986-03-16 Issue:1 Volume:94 Page:95-106
  • ISSN:0031-8965
  • Container-title:physica status solidi (a)
  • language:de
  • Short-container-title:phys. stat. sol. (a)

Author:

Berti M.,Drigo A. V.,Lulli G.,Merli P. G.,Antisari M. Vittori

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of fluence-rate related effects on the sputtering of silicon at elevated target temperatures;Journal of Applied Physics;2009-02-15

2. Role of electronic and nuclear energy losses in swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04

3. MeV heavy ion beam induced epitaxial crystallization of buried Si3N4 layer;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-03

4. Swift heavy-ion-induced epitaxial crystallization of buried Si3N4 layer;Journal of Applied Physics;2005-07

5. Annihilation kinetics of defects induced by phosphorus ion implantation in silicon;Applied Surface Science;2001-12
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