Excimer laser annealed gold and silver ohmic contacts on+-GaAs

Author:

Sircar P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs

2. Q‐switched ruby laser alloying of Ohmic contacts on gallium arsenide epilayers

3. See: AIP Conf. Proc. Laser-Solid Interactions and Laser Processing, 1978, Mater. Res. Soc, Boston.

4. Ohmic contacts for GaAs devices

5. , , and , IEEE Elec. Comp. Conf. Proc. No. 30, Semiconductor Processing, 1980 (p. 55 to 60).

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1. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors;Science and Technology of Advanced Materials;2002-01

2. Recent developments in ohmic contacts for III–V compound semiconductors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-09

3. Development of ohmic contact materials for GaAs integrated circuits;Materials Science Reports;1990-01

4. Rapid IR lamp alloying of nickel-based ohmic contacts on n-GaAs;Thin Solid Films;1988-12

5. The influence of excimer laser treatment on an aluminium alloy surface;Surface and Coatings Technology;1988-06

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