Q‐switched ruby laser alloying of Ohmic contacts on gallium arsenide epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90331
Reference9 articles.
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5. Chemical vapor deposition of silicon using a CO2laser
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1. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors;Science and Technology of Advanced Materials;2002-01
2. Laser Melting and Microwelding;Laser-Assisted Microtechnology;1998
3. A controllable mechanism of forming extremely low‐resistance nonalloyed ohmic contacts to group III‐V compound semiconductors;Journal of Applied Physics;1993-12-15
4. Development of ohmic contact materials for GaAs integrated circuits;Materials Science Reports;1990-01
5. Laser microfabrication of thin films: Part three;Optics & Laser Technology;1987-04
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