Electrical Properties of Ti/Au/SiO2/InP Structures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Effect of substrate temperature on the properties of SiO2/InP structure prepared by photochemical vapor deposition
2. InP Schottky contacts with increased barrier height
3. A study of the chemical oxide/InP interface states
4. J. appl. Phys. MS Thesis, New Jersey Inst. Technology, Newark (NJ) 1991.
5. Determination of the Properties of Films on Silicon by the Method of Ellipsometry
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