Effect of substrate temperature on the properties of SiO2/InP structure prepared by photochemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345372
Reference15 articles.
1. Study of boron nitride gate insulators onto InP grown by low‐temperature chemical vapor deposition
2. Reduction of fast interface states and suppression of drift phenomena in arsenic‐stabilized metal‐insulator‐InP structures
3. Indirect plasma deposition of silicon dioxide
4. High mobilityn‐channel metal‐oxide‐semiconductor field‐effect transistors based on SiO2‐InP interface
5. Device-quality SiO2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime
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