Characterisation of Si/Ge0.5Si0.5 Strained-Layer Superlattices on SIMOX Substrates-Reference-Cited by-同舟云学术

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Characterisation of Si/Ge0.5Si0.5 Strained-Layer Superlattices on SIMOX Substrates

Published:1992-08-16 Issue:2 Volume:132 Page:419-424
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Lin Chenglu,Hemment P. L. F.,Chan C. W. M.,Li Jinhua,Zhu Wenhua,Ni Rushan,Zhou Guoliang,Zou Shichang

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography

2. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy

3. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

4. SiGe/Si superlattices on implanted buried‐oxide structures

5. Mass‐spectrometer‐controlled fabrication of Si/Ge superlattices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion-beam characterization in superlattices;Handbook of Thin Films;2002

2. Strained-layer analysis with high-energy ion channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

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