Strained-layer analysis with high-energy ion channeling-Reference-Cited by-同舟云学术

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Strained-layer analysis with high-energy ion channeling

Published:1996-09 Issue:1-4 Volume:118 Page:97-102
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

van Dijk P.W.L.,van Ijzendoorn L.J.,de Voigt M.J.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Monte Carlo Channeling Calculations

2. Diffusion and strain relaxation in Si/Si1−xGex/Si structures studied with Rutherford backscattering spectrometry

3. Germanium diffusion and strain relaxation in Si/Si1−xGex/Si structures

4. Interdiffusion and thermally induced strain relaxation in strainedSi1−xGex/Si superlattices

5. Characterisation of Si/Ge0.5Si0.5 Strained-Layer Superlattices on SIMOX Substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cyclotron-based high energy ion channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03

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