Modification of Growth Modes in Lattice-Mismatched Epitaxial Systems: Si/Ge
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
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1. Capturing Dislocation Half-Loop Formation and Dynamics in Epitaxial Growth Atomistically at Diffusive Time Scales;Materialia;2021-12
2. Misfit Strain Relaxation by Dislocations in InAs Islands and Layers Epitaxially Grown on (001)GaAs Substrates by MOVPE;Crystal Research and Technology;1998
3. The growth of nanometer Si/SiGe/Si quantum well wires with local molecular beam epitaxy in dependence on the shadow mask geometry;Journal of Crystal Growth;1996-10
4. Carbon-mediated effects in silicon and in silicon-related materials;Materials Chemistry and Physics;1996-05
5. Growth of Germanium on Porous Silicon (001);MRS Proceedings;1996
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