The growth of nanometer Si/SiGe/Si quantum well wires with local molecular beam epitaxy in dependence on the shadow mask geometry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Quantized conductance of point contacts in a two-dimensional electron gas
2. Quenching of the Hall resistance in a novel geometry
3. Influence of Edge Currents on Shubnikov-Dehaas Oscillations in Two-Dimensional Systems
4. Silicon/germanium quantum structures
5. Modification of Growth Modes in Lattice-Mismatched Epitaxial Systems: Si/Ge
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic properties of Si/SiGe ultrathin quantum wire superlattices;physica status solidi (b);2003-07
2. Optical and structural properties of Si/SiGe wires grown on patterned Si substrates;Thin Solid Films;2000-12
3. Structural and optical properties of Si/Si 1−x Ge x wires;Thin Solid Films;2000-07
4. Investigation of Inhomogeneous In-Plane Strain Relaxation in Si/SiGe Quantum Wires by High Resolution x-ray Diffraction;MRS Proceedings;1999
5. Optical in situ measurements of temperature and layer thickness in Si molecular beam epitaxy;Journal of Crystal Growth;1996-12
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