Author:
Aslam M.,Singh R.,Balk P.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon Electrodes
2. Electron trapping in SiO2 at 295 and 77 °K
3. in: Physics of SiO2, and Its Interfaces, Ed. Pergamon Press.
4. in: Insulating Films on Semiconductors, Ed. and , North-Holland Publ. Co., Amsterdam (1983).
5. in: Insulating Films on Semiconductors, Ed. and , North-Holland Publ. Co., Amsterdam (p. 204).
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection;Semiconductors;2018-12
2. The Current Status and Future Trends of SIMOX/SOI, New Technological Applications of the SIC/SOI System;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998
3. Structural defects in SIMOX;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05
4. O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures;Journal of Applied Physics;1996-03
5. Structural defects in SIMOX;Ion Beam Processing of Materials and Deposition Processes of Protective Coatings;1996