Electron emission from extended defects: DLTS signal in case of dislocation traps-Reference-Cited by-同舟云学术

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Electron emission from extended defects: DLTS signal in case of dislocation traps

Published:1990-09-16 Issue:1 Volume:121 Page:187-193
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Figielski T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Inst. Phys. C;Schröter,1989

2. Electrical properties of dislocations and point defects in plastically deformed silicon

3. and , Defects in Crystals, Ed. World Scientific Publ. Co., 1988 (p. 366).

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