Silicon zone sublimation regrowth-Reference-Cited by-同舟云学术

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Silicon zone sublimation regrowth

Published:1988-05-16 Issue:1 Volume:107 Page:213-223
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Aleksandrov L. N.,Lozovskii S. V.,Knyazev S. Y.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Zone Melting, Wiley, New York/London 1958 (p. 236).

2. , and , Zone Regrowth of Semiconductor Materials by Temperature Gradient, Metallurgiya, Moskva, 1987 (in Russian).

3. Reproduction Epitaxy, Metallurgiya, Moskva, 1981 (in Russian).

4. and , in: Thin Films – Interdiffusion and Reactions. Ed. and . , J. Willy and Sons, 1978 (p. 576).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of zinc oxide nanostructures by mass transfer through a micro-sized vacuum zone in a temperature gradient field;IOP Conference Series: Materials Science and Engineering;2021-01-01

2. Sorption vacuumization of a growth cell during zone sublimation recrystallization;Technical Physics Letters;2013-02

3. Simulation of Sublimation Growth of SiC Single Crystals;physica status solidi (b);1997-07

4. Control of SiC growth and graphitization in sublimation sandwich system;Materials Science and Engineering: B;1997-04

5. Analysis of silicon carbide growth by sublimation sandwich method;Journal of Crystal Growth;1997-04

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