Control of SiC growth and graphitization in sublimation sandwich system-Reference-Cited by-同舟云学术

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Control of SiC growth and graphitization in sublimation sandwich system

Published:1997-04 Issue:1-3 Volume:46 Page:340-344
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Karpova S.Yu.,Makarov Yu.N.,Ramm M.S.,Talalaev R.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Yu.A. Vodakov and E.N. Mokhov, Pat. USSR N403275 (1970), Pat. UK N1458445 (21.02.74), Pat. USA N4147575 (03,04.79).

2. S.Yu. Karpov, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, R.A. Talalaev and Yu.A. Vodakov, J. Crystal Growth (submitted for publication).

3. Thermodynamic Study of SiC Utilizing a Mass Spectrometer

4. Silicon zone sublimation regrowth

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3. Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles;Materials Science Forum;2013-01

4. Sublimation sandwich route to ultralong zinc-blende ZnSe nanowires and the cathodoluminescence properties of individual nanowires;Journal of Alloys and Compounds;2011-02

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