Analysis of silicon carbide growth by sublimation sandwich method-Reference-Cited by-同舟云学术

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Analysis of silicon carbide growth by sublimation sandwich method

Published:1997-04 Issue:3-4 Volume:173 Page:408-416
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Karpov S.Yu.,Makarov Yu.N.,Mokhov E.N.,Ramm M.G.,Ramm M.S.,Roenkov A.D.,Talalaev R.A.,Vodakov Yu.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Yu.A. Vodakov and E.N. Mokhov, Patent USSR No. 403275 (1970), Patent GB No. 1458445 (21/02/74), Patent USA No. 4147575 (03/04/79).

3. Effect of crystallographic orientation on the polytype stabilization and transformation of silicon carbide

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1. Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates;Journal of the Korean Physical Society;2024-09-04

2. Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC;Nanomaterials;2020-11-11

3. Doping of SiC Crystals during Sublimation Growth and Diffusion;Crystal Growth;2019-11-06

4. SiC-based electronics (100th anniversary of the Ioffe Institute);Uspekhi Fizicheskih Nauk;2018-10

5. The spin relaxation of nitrogen donors in 6H SiC crystals as studied by the electron spin echo method;Journal of Applied Physics;2016-04-07

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