The spin relaxation of nitrogen donors in 6H SiC crystals as studied by the electron spin echo method-Reference-Cited by-同舟云学术

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The spin relaxation of nitrogen donors in 6H SiC crystals as studied by the electron spin echo method

Published:2016-04-07 Issue:13 Volume:119 Page:135706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Savchenko D.¹²^ORCID,Shanina B.³^ORCID,Kalabukhova E.³,Pöppl A.⁴,Lančok J.¹,Mokhov E.⁵⁶^ORCID

Affiliation:

1. Institute of Physics of the Czech Academy of Sciences, Prague 182 21, Czech Republic

2. National Technical University of Ukraine “Kyiv Polytechnic Institute,” Kyiv 03056, Ukraine

3. V.E. Lashkaryov Institute of Semiconductor Physics, NASU, Kyiv 03028, Ukraine

4. Institute of Experimental Physics II, Leipzig University, Leipzig D-04103, Germany

5. A.F. Ioffe Physical Technical Institute, RAS, St. Petersburg 194021, Russia

6. Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg 19710, Russia

Funder

Ministerstvo Školství, Mládeže a Tělovýchovy (MŠMT)

Grantová Agentura České Republiky (GACR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945438

Reference20 articles.

1. Electron spin relaxation times of phosphorus donors in silicon

2. Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects

3. Direct Measurement of the Valley-Orbit Splitting of Shallow Donors in Silicon

4. Pulsed EPR studies of shallow donor impurities in SiC

5. Spin-lattice relaxation of nitrogen in 6H SiC

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