Defect evaluation and electrical characteristics of GaSb and In0.17Ga0.83Sb films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Defect evaluation and electrical characteristics of GaSb and In0.17Ga0.83Sb films grown by molecular beam epitaxy

Published:1994-01-16 Issue:1 Volume:141 Page:145-154
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kodama M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Surface Cleaning of GaSb (100) Substrates for Molecular-Beam Epitaxy

2. Low dislocation density GaSb single crystals grown by LEC technique

3. The Czochralski growth of gallium antimonide single crystals under reducing conditions

4. The preparation of Ga-rich GaxIn1−xSb alloy crystals

5. Selective Photoetching of Gallium Arsenide

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