Surface Cleaning of GaSb (100) Substrates for Molecular-Beam Epitaxy-Reference-Cited by-同舟云学术

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Surface Cleaning of GaSb (100) Substrates for Molecular-Beam Epitaxy

Published:1984-12-20 Issue:Part 1, No. 12 Volume:23 Page:1657-1658
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kodama Mitsuru,Ryoji Akira,Kimata Morihiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of a New Chemical Etchant for GaSb (100) and (111) Substrate Preparation for Epitaxial Growth;Journal of The Electrochemical Society;1995-07-01

2. Influence of Ga droplets and related morphological defects on the MBE-GaSb film and GaSb p–n diode characteristics;Physica Status Solidi (a);1994-02-16

3. Defect evaluation and electrical characteristics of GaSb and In0.17Ga0.83Sb films grown by molecular beam epitaxy;Physica Status Solidi (a);1994-01-16

4. Influence of carbon contamination on etched GaSb substrate on the quality of MBE-GaSb film and electrical transport through the film and the substrate;Crystal Research and Technology;1994

5. Study of GaSb(001) substrate chemical etching for molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-01

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