Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Published:1998-08-01 Issue:8 Volume:13 Page:936-940
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Bertru N,Baranov A,Cuminal Y,Almuneau G,Genty F,Joullié A,Brandt O,Mazuelas A,Ploog K H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μm

2. High-power 2.0 mu m InGaAsP laser diodes

3. Operation of strained-layer diode laser bars at 1.94 µm to 27 W QCW

4. High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density

5. High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/m

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb;IEEE Journal of Selected Topics in Quantum Electronics;2015-11

2. Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate;IEEE Journal of Quantum Electronics;2015-05

3. Characterisation of Ga_1-xIn_xSb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer;AIMS Materials Science;2015

4. Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells;Journal of Applied Physics;2013-02-07

5. Spectral and Transient Luminescence Measurements on GaSb/AlGaSb Quantum Wells Grown on GaSb/GaAs Heterojunctions with and without Interfacial Misfit Arrays;Japanese Journal of Applied Physics;2013-02-01

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