Operation of strained-layer diode laser bars at 1.94 µm to 27 W QCW
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950062?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu m
2. High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
3. InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μm
4. High-power 2.0 mu m InGaAsP laser diodes
5. High-power single-mode 2.0 mu m laser diodes
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 1.7–1.8 µm Diode lasers based on quantum-well InGaAsP/InP heterostructures;Semiconductors;2003-11
2. High-power 1.8-μm InGaAsP/InP lasers;Technical Physics Letters;2002-02
3. Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy;Semiconductor Science and Technology;1998-08-01
4. High-power operation of InGaAsP-InP laser diode array at 1.73 /spl mu/m;IEEE Photonics Technology Letters;1997-10
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