Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells-Reference-Cited by-同舟云学术

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Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Published:2013-02-07 Issue:5 Volume:113 Page:053505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jahan Nahid A.,Hermannstädter Claus,Sasakura Hirotaka,Rotter Thomas J.,Ahirwar Pankaj,Balakrishnan Ganesh,Kumano Hidekazu,Suemune Ikuo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4789374

Reference49 articles.

1. Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing

2. The use of tunable diode laser absorption spectroscopy for atmospheric measurements

3. Modern trends in diode laser spectroscopy

4. Tunable diode laser absorption spectroscopy of carbon monoxide around 235 μm

5. InGaAsSb thermophotovoltaic diode: Physics evaluation

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1. Tuning Hot Carrier Dynamics of InP/ZnSe/ZnS Quantum Dots by Shell Morphology Control;Small;2021-12-09

2. An Analytical Approach to Study Annealing Induced Interdiffusion of In and Ga for Truncated Pyramidal InAs/GaAs Quantum Dots;IEEE Transactions on Nanotechnology;2020

3. Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels;Semiconductor Science and Technology;2016-11-10

4. Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells;Semiconductor Science and Technology;2016-01-12

5. Luminescence quenching of conductive Si nanocrystals via “Linkage emission”: Hopping-like propagation of infrared-excited Auger electrons;Journal of Applied Physics;2014-08-14

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