Neutralization of Acceptors and Formation of Agglomerates in Silicon Wafers Due to Intrinsic Point Defects Created by Chemomechanical Polishing and by Quenching-Reference-Cited by-同舟云学术

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Neutralization of Acceptors and Formation of Agglomerates in Silicon Wafers Due to Intrinsic Point Defects Created by Chemomechanical Polishing and by Quenching

Published:1987-10-16 Issue:2 Volume:103 Page:413-420
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Reichel J.,Sevcik S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Quenched‐In Defects in p‐Type Silicon

2. Quenched-in Levels in p-Type Silicon

3. Iron as a thermal defect in silicon

4. The solution of iron in silicon

5. Iron-related deep levels in silicon

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1. Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy;Journal of Applied Physics;2020-02-07

2. Physics of Copper in Silicon;Journal of The Electrochemical Society;2002

3. Copper diffusivity in silicon: A re-examination;Materials Science and Engineering: B;1994-07

4. Impurity decoration of defects in float zone and polycrystalline silicon via chemomechanical polishing;Applied Physics Letters;1993-05-17

5. Electrical Properties of Copper Silicide/Silicon Interfaces;MRS Proceedings;1993

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