Author:
Hirose Masataka,Osakas Yukio,Yukitomo Kazuo
Subject
Electrical and Electronic Engineering,Computer Networks and Communications
Reference9 articles.
1. FAMOS-a new semiconductor charge storage device;Bentchkowsky;Solid-State Electron.,1974
2. Horiuchi, M.: High-speed alterable, non-volatile MIS memory, IEEE-IEDM Abstract, No. 24, 2 (Dec. 1972).
3. Electronic properties of chemically deposited polycrystalline silicon;Hirose;J. Appl. Phys.,1979
4. Yukitomo and Kazuo: Study of the Floating gate MOS non-volatile memory, M.S. Thesis, Hiroshima University, Japan (1979).
5. Fowler-Nordheim tunneling into thermally grown SiO2;Lenzlinger;J. Appl. Phys.,1969
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献