Famos—A new semiconductor charge storage device-Reference-Cited by-同舟云学术

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Famos—A new semiconductor charge storage device

Published:1974-06 Issue:6 Volume:17 Page:517-529
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Frohman-Bentchkowsky Dov

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Int. Electron Devices Meeting;Wegener,1969

2. A new MNOS charge storage effect

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