Short wave infrared LEDs based on strained GeSn-Reference-Cited by-同舟云学术

Short wave infrared LEDs based on strained GeSn

Published:2018-04-08 Issue:5 Volume:60 Page:1151-1154
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw Opt Technol Lett

Author:

Zhang Li-Feng¹^ORCID,Shu Bin¹,Jiang Ruo-Hong¹,Gao Yv-Long¹,Zhang He-Ming¹,Xuan Rong-Xi¹,Hu Hui-Yong¹

Affiliation:

1. School of Microelectronicsof Microelectronics; Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University; Xi'an 710071 China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Achieving direct band gap in germanium through integration of Sn alloying and external strain;Gupta;J Appl Phys.,2013

2. Theoretical analysis of performance enhancement in GeSn/SiGeSn light-emitting diode enabled by Si3N4 liner stressor technique;Zhang;Appl Opt.,2016

3. Electronic band structure and effective mass parameters of Ge1−xSnx alloys;Low;J Appl Phys.,2012

4. Lasing in direct-bandgap GeSn alloy grown on Si;Wirths;Nat Photon.,2015

5. Optical transitions in direct-bandgap Ge1−xSnx alloys;Stange;ACS Photon.,2015

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