Theoretical analysis of performance enhancement in GeSn/SiGeSn light-emitting diode enabled by Si_3N_4 liner stressor technique
Author:
Funder
National Natural Science Foundation of China (NSFC)
Publisher
The Optical Society
Reference36 articles.
1. Ge-on-Si laser operating at room temperature
2. Direct-gap optical gain of Ge on Si at room temperature
3. Electrically pumped lasing from Ge Fabry-Perot resonators on Si
4. Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence
5. Tensile-strained germanium microdisk electroluminescence
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