Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density

Author:

Jung Yongduck1ORCID,Burt Daniel1,Zhang Lin1,Kim Youngmin1,Joo Hyo-Jun1,Chen Melvina1,Assali Simone2,Moutanabbir Oussama2,Seng Tan Chuan1,Nam Donguk1

Affiliation:

1. Nanyang Technological University

2. École Polytechnique de Montréal

Abstract

Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits their integration into practical applications. While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers, the effect of defects on the lasing threshold has not been well studied yet. Herein, we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly. We first present a method of obtaining high-quality GeSn-on-insulator layers using low-temperature direct bonding and chemical–mechanical polishing. Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by 10 times and 6 times, respectively. Our result presents a new path towards pushing the performance of GeSn lasers to the limit.

Funder

Mitacs

Innovation for Defence Excellence and Security, IDEaS

PRIMA Québec

Canada Foundation for Innovation

Canada Research Chairs

Natural Sciences and Engineering Research Council of Canada

iGrant of Singapore A*STAR

National Research Foundation Singapore

Ministry of Education - Singapore

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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