Affiliation:
1. Nanyang Technological University
2. École Polytechnique de Montréal
Abstract
Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits their integration into practical applications. While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers, the effect of defects on the lasing threshold has not been well studied yet. Herein, we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly. We first present a method of obtaining high-quality GeSn-on-insulator layers using low-temperature direct bonding and chemical–mechanical polishing. Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by
∼
10
times and
∼
6
times, respectively. Our result presents a new path towards pushing the performance of GeSn lasers to the limit.
Funder
Mitacs
Innovation for Defence Excellence and Security, IDEaS
PRIMA Québec
Canada Foundation for Innovation
Canada Research Chairs
Natural Sciences and Engineering Research Council of Canada
iGrant of Singapore A*STAR
National Research Foundation Singapore
Ministry of Education - Singapore
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献