Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs-Reference-Cited by-同舟云学术

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

Published:2020-12-07 Issue:2 Volume:31 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Alim Mohammad A.¹^ORCID,Ali Mayahsa M.²,Gaquiere Christophe³

Affiliation:

1. Electrical and Electronic Engineering University of Chittagong Chittagong Bangladesh

2. Postgraduate Studies Administrator in Informatics Institute University of Information Technology and Communications Baghdad Iraq

3. Institute of Electronic, Microelectronic and Nanotechnology (IEMN) The University of Lille Lille France

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference39 articles.

1. On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates;Jarndal A;Int J RF Microw Comput Aided Eng.,2020

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1. Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-11-22