Multibias and temperature dependence of the current‐gain peak in GaN HEMT-Reference-Cited by-同舟云学术

Multibias and temperature dependence of the current‐gain peak in GaN HEMT

Published:2020-01-07 Issue:4 Volume:30 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Alim Mohammad A.¹^ORCID,Hasan Muhammad A.¹,Rezazadeh Ali A.²,Gaquiere Christophe³,Crupi Giovanni⁴^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering University of Chittagong Bangladesh

2. Microwave and Communication Systems Research Group, The University of Manchester UK

3. Institute of Electronic, Microelectronic and Nanotechnology (IEMN), University of Lille France

4. Department of Biomedical and Dental Sciences and Morphofunctional Imaging University of Messina Italy

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference22 articles.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition;2023 16th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS);2023-10-25