Quantification of Sheet Resistance in Boron‐Diffused Silicon Using Micro‐Photoluminescence Spectroscopy at Room Temperature-Reference-Cited by-同舟云学术

Quantification of Sheet Resistance in Boron‐Diffused Silicon Using Micro‐Photoluminescence Spectroscopy at Room Temperature

Published:2017-09 Issue:10 Volume:1 Page:1700088
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Nguyen Hieu T.¹,Johnston Steve²,Paduthol Appu³,Harvey Steven P.²,Phang Sieu Pheng¹,Samundsett Christian¹,Sun Chang¹,Yan Di¹,Trupke Thorsten³,Al‐Jassim Mowafak M.²,Macdonald Daniel¹

Affiliation:

1. Research School of Engineering, The Australian National UniversityCanberraACT 2601Australia

2. National Renewable Energy LaboratoryGoldenCO 80401USA

3. School of Photovoltaic and Renewable Energy EngineeringThe University of New South WalesSydneyNSW 2052Australia

Funder

Australian Renewable Energy Agency

American Academy of Child and Adolescent Psychiatry

U.S. Department of Energy

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.201700088

Reference35 articles.

1. 24% efficient silicon solar cells

2. Fast, contactless and spatially resolved measurement of sheet resistance by an infrared method

3. M.Juhl T.Trupke Y.Augarten “Emitter sheet resistance from photoluminescence images ” in Proc. 39th IEEE Photovolt. Spec. Conf.2013 198.

4. Photoluminescence Imaging of Silicon Wafers and Solar Cells With Spatially Inhomogeneous Illumination

5. Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si

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