Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage-Reference-Cited by-同舟云学术

Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage

Published:2015-07 Issue:7 Volume:9 Page:410-413
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Jeon Woojin¹,Rha Sang Ho²,Lee Woongkyu¹,An Cheol Hyun¹,Chung Min Jung¹,Kim Sang Hyun¹,Cho Cheol Jin¹³,Kim Seong Keun³,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center; Seoul National University; 151-742 Seoul Republic of Korea

2. Process Development Team; Semiconductor R&D Center, Samsung Electronics Co. Ltd.; 446-712 Gyeonggi-do Republic of Korea

3. Center for Electronic Materials; Korea Institute of Science and Technology; 136-791 Seoul Republic of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201510146/fullpdf

Reference13 articles.

1. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

2. C. S. Hwang Atomic Layer Deposition of Nanostructured Materials, edited by N. Pinna and M. Knez, Atomic Layer Deposition for Microelectronic Applications (Wiley-VCH, Weinheim, 2011), p. 159

3. C. S. Hwang Atomic Layer Deposition for Semiconductors (Springer US, New York, 2014)

4. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

5. Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

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