Wave-Function Topology Effects on Charged Excitons in Type-II InAs/GaAsSb Quantum Dots and Rings
Author:
Affiliation:
1. Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC) Isaac Newton; 8, E-28760, Tres Cantos Madrid Spain
Funder
Spanish MINECO
Comunidad de Madrid
CSIC
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201800314/fullpdf
Reference23 articles.
1. Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates
2. Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
3. Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
4. GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations
5. Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix;Physical Review B;2019-11-06
2. Topology and Geometry Controlled Properties of Nanoarchitectures;physica status solidi (RRL) - Rapid Research Letters;2019-01
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